Additional file 1 of Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Additional file 1: Supplementary Note 1. Fabrication of hole through wafers. Supplementary Note 2. Schematic illustration of device fabrication for hole. Figure S1. Characterizations of suspended graphene structure. (a) The Raman spectrum of bilayer suspended graphene. The small D peak is observed which attributed to strain effect and is normal in suspended graphene. (b) After FMs depositions the Scanning electron microscopy (SEM) image of final device from top side. Figure S2. (a) The AFM image of single layer MoSe2 flake is taken on substrate. (b) The height profile corresponding to thin MoSe2 shows single layer as the thickness of our flake is very close to reported value (~0.77 nm). (c) The Raman spectrum of single layer MoSe2 on supported region. The A1g and E12g peaks are observed around ~240.6 and 286.4 cm-1 which is also sign of single layer MoSe2. Figure S3. (a) Schematic drawing of graphene FETs with Co and NiFe doping. (b) The resistivity vs back gate, Dirac measurements. (c) The RA of the junction devices before and after annealing. The resistance of all devices is reduced after annealing. Figure S4. The MR (%) values at different temperature for all type of devices after annealing by keeping current I = 10 μA.